IR2132J

Product Summary

The IR2132J is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. The IR2132J features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use at high frequencies. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operate up to 600 volts.

Parametrics

IR2132J absolute maximum ratings: (1)High Side Floating Supply Voltage: -0.3V to 625V; (2)High Side Floating Offset Voltage: VB1,2,3-25V to VB1,2,3+0.3V; (3)High Side Floating Output Voltage: VS1,2,3-0.3V to VB1,2,3+0.3V; (4)Low Side and Logic Fixed Supply Voltage: -0.3V to 25V; (5)Logic Ground: VCC-25V to VCC+0.3V; (6)Low Side Output Voltage: -0.3V to VCC+0.3V; (7)Logic Input Voltage (HIN1,2,3, LIN1,2,3 & ITRIP): VSS-0.3V to (VSS + 15) or (VCC + 0.3) whichever is lower; (8)FAULT Output Voltage: VSS-0.3V to VCC+0.3V; (9)Operational Amplifier Output Voltage: VSS-0.3V to VCC+0.3V; (10)Operational Amplifier Inverting Input Voltage: VSS-0.3V to VCC+0.3V; (11)Allowable Offset Supply Voltage Transient: 50 V/ns; (12)Package Power Dissipation @ TA ≤ +25℃: 2.0W; (13)Thermal Resistance, Junction to Ambient: 63℃/W; (14)Junction Temperature: 150℃; (15)Storage Temperature: -55℃ to 150℃; (16)Lead Temperature (Soldering, 10 seconds): 300℃.

Features

IR2132J features: (1)Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune; (2)Gate drive supply range from 10 to 20V; (3)Undervoltage lockout for all channels; (4)Over-current shutdown turns off all six drivers; (5)Independent half-bridge drivers; (6)Matched propagation delay for all channels; (7)2.5V logic compatible; (8)Outputs out of phase with inputs; (9)Cross-conduction prevention logic; (10)Also available LEAD-FREE.

Diagrams