(China (Mainland))
Product Summary
The EDE2116AEBG-8E-F is a 2G bits DDR2 SDRAM.
Parametrics
EDE2116AEBG-8E-F absolute maximum ratings: (1)Power supply voltage VDD: -1.0 to +2.3 V; (2)Power supply voltage for output VDDQ: -0.5 to +2.3 V; (3)Input voltage VIN: -0.5 to +2.3 V; (4)Output voltage VOUT: -0.5 to +2.3 V; (5)Storage temperature Tstg: -55 to +100℃; (6)Power dissipation PD: 1.0 W; (7)Short circuit output current IOUT: 50 mA.
Features
EDE2116AEBG-8E-F features: (1)Double-data-rate architecture; two data transfers per clock cycle; (2)The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture; (3)Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver; (4)DQS is edge-aligned with data for READs; centeraligned with data for WRITEs; (5)Differential clock inputs (CK and /CK); (6)DLL aligns DQ and DQS transitions with CK transitions; (7)Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS; (8)Data mask (DM) for write data; (9)Posted /CAS by programmable additive latency for better command and data bus efficiency; (10)/DQS can be disabled for single-ended Data Strobe operation; (11)Off-Chip Driver (OCD) impedance adjustment is not supported.
Diagrams
