(China (Mainland))
Product Summary
The SI4431ADY-T1-E3 is a P-Channel 30-V (D-S) MOSFET.
Parametrics
SI4431ADY-T1-E3 absolue maximum ratings: (1)Drain-Source Voltage VDS: -30V; (2)Gate-Source Voltage VGS: ±20V; (3)Continuous Drain Current (TJ = 150℃): -7.2 to -5.3A; (4)Pulsed Drain Current IDM: -30A; (5)continuous Source Current (Diode Conduction): 2.5W; (6)Operating Junction and Storage Temperature Range TJ, Tstg: -55 to 150 ℃.
Features
SI4431ADY-T1-E3 features: (1)TrenchFET Power MOSFET; (2)Advanced High Cell Density Process.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 SI4431ADY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 7A 2.5W |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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Si4401BDY |
Other |
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Data Sheet |
Negotiable |
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SI4401BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 40V 10.5A 0.014Ohm |
Data Sheet |
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SI4401BDY-T1-GE3 |
Vishay/Siliconix |
MOSFET 40V 10.5A 2.9W 14mohm @ 10V |
Data Sheet |
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SI4401DDY-T1-GE3 |
Vishay/Siliconix |
MOSFET 40V 16.1A P-CH MOSFET |
Data Sheet |
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SI4401DY |
Vishay/Siliconix |
MOSFET 40V 10.5A 3W |
Data Sheet |
Negotiable |
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|
SI4401DY-E3 |
Vishay/Siliconix |
MOSFET 40V 10.5A 3W |
Data Sheet |
Negotiable |
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