(China (Mainland))
Product Summary
The IRF7343TRPBF is a HEXFET Power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized IRF7343TRPBF design that HEXFET Power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple device can be used in an application with dramatically reduced board space. The package of the IRF7343TRPBF is designed for vapor phase, infra red, or wave soldering techniques.
Parametrics
IRF7343TRPBF absolute maximum ratings: (1)ID @ TA = 25℃ Continuous Drain Current, VGS @ -10V: -10A; (2)ID @ TA = 70℃ Continuous Drain Current, VGS @ - 10V: -7.1A; (3)IDM Pulsed Drain Current: -45; (4)PD @TA = 25℃ Power Dissipation: 2.5W; (5)Linear Derating Factor: 0.02 mW/℃; (6)VGS Gate-to-Source Voltage: ± 20 V; (7)EAS Single Pulse Avalanche Energy: 370 mJ; (8)dv/dt Peak Diode Recovery dv/dt: -5.0 V/ns; (9)TJ, TSTG Junction and Storage Temperature Range: -55 to +150 ℃.
Features
IRF7343TRPBF features: (1)Generation V Technology; (2)Ultra Low On-Resistance; (3)PDual N and P channel MOSFET; (4)Surface Mount; (5)Fully avalanche rated; (6)Lead-free.
Diagrams
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 IRF7343TRPBF |
International Rectifier |
MOSFET MOSFT DUAL N/PCh 55V 4.7A |
Data Sheet |
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