(China (Mainland))
Product Summary
The FDS6975 is a P-Channel Logic Level MOSFET produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. The FDS6975 is well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Parametrics
FDS6975 absolute maximum ratings: (1)VDSS, Drain-Source Voltage: -30 V; (2)VGSS, Gate-Source Voltage: ±20 V; (3)ID, Drain Current, Continuous (Note 1a): -6 A; Pulsed: -20A; (4)PD, Power Dissipation for Dual Operation: 2 W; (5)PD, Power Dissipation for Single Operation (Note 1a): 1.6W; (Note 1b): 1W; (Note 1c): 0.9W; (6)TJ,TSTG Operating and Storage Temperature Range: -55 to 150℃.
Features
FDS6975 features: (1)-6 A, -30 V. RDS(ON) = 0.032 W @ VGS = -10 V, RDS(ON) = 0.045 W @ VGS = -4.5 V.; (2)Low gate charge (14.5nC typical); (3)High performance trench technology for extremely low RDS(ON); (4)High power and current handling capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FDS6975 |
Fairchild Semiconductor |
MOSFET SO-8 DUAL P-CH -30V |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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FDS602SP |
Other |
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Data Sheet |
Negotiable |
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FDS602ST |
Other |
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Data Sheet |
Negotiable |
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FDS602TX |
Other |
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Data Sheet |
Negotiable |
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FDS6299S |
Fairchild Semiconductor |
MOSFET 30V N-Ch PowerT SyncFET |
Data Sheet |
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FDS6575 |
Fairchild Semiconductor |
MOSFET SO-8 P-CH -20V |
Data Sheet |
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FDS6570A |
Fairchild Semiconductor |
MOSFET SO-8 N-CH 20V |
Data Sheet |
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