Product Summary

The 2SD2391T100Q is a Medium Power Transistor.

Parametrics

2SD2391T100Q absolute maximum ratings: (1)Collector-base voltage, VCBO: 60V; (2)Collector-emitter voltage, VCEO:60V; (3)Emitter-base voltage, VCEO: 6V; (4)Collector current, IC: 2A; (5)Collector power dissipation, PC:0.5W; (6)Junction temperature, TJ: 150℃; (7)Storage temperature, TSTG: -55 to +150℃.

Features

2SD2391T100Q features: (1)Low saturation voltage , typically VCE (sat) =0.13V at IC / IB =1A /50mA; (2)Collector-emitter voltage =60V; (3)Pc = 2W (on 40×40×0.7mm ceramic board); (4)Complements the 2SB1561.

Diagrams

2SD2391T100Q block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
2SD2391T100Q
2SD2391T100Q
ROHM Semiconductor
Transistors Bipolar (BJT) NPN 60V 2A
Data Sheet
0-1: $0.43
1-25: $0.34
25-100: $0.26
100-500: $0.20
500-1000: $0.15
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
2SD200
2SD200
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Data Sheet
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2SD2000
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Data Sheet
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2SD20000P
2SD20000P

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Data Sheet
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2SD201
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Data Sheet
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2SD2012
2SD2012
STMicroelectronics
Transistors Bipolar (BJT) NPN Silcon Pwr Trans
Data Sheet
0-1: $0.30
1-10: $0.26
10-100: $0.23
100-250: $0.22
2SD2012(F,M)
2SD2012(F,M)
Toshiba
Transistors Bipolar (BJT) NPN VCEO 60V VCE 0.4 Ic 2A Audio Freq App
Data Sheet
0-1: $0.30
1-10: $0.28
10-100: $0.25
100-250: $0.25