(China (Mainland))
Product Summary
The FDC6020C is an N & P-Channel MOSFET produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. The device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. The applications of the FDC6020C include DC/DC converter, Load switch, Motor Driving.
Parametrics
FDC6020C abaoslute maximum ratings: (1)VDSS, Drain-Source Voltage: 20 V; (2)VGSS, Gate-Source Voltage: ±12 V; (3)ID, Drain Current, Continuous (Note 1a): 5.9 A; Pulsed: 20A; (4)PD, Power Dissipation for Dual Operation (Note 1a): 1.6 W; Power Dissipation for single Operation (Note 1a): 1.8W; (Note 1b): 1.2W; (5)TJ, TSTG, Operating and Storage Junction Temperature Range: -55 to +150℃.
Features
FDC6020C features: (1)Q1 -4.2 A, -20V. RDS(ON) = 55 mΩ@ VGS = -4.5 V; RDS(ON) = 82 mΩ@ VGS = -2.5 V; (2)Q2 5.9 A, 20V. RDS(ON) = 27 mΩ@ VGS = 4.5 V; RDS(ON) = 39 m?@ VGS = 2.5 V; (3)Low gate charge; (4)High performance trench technology for extremely low RDS(ON); (5)FLMP SSOT-6 package: Enhanced thermal; (6)performance in industry-standard package size.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FDC6020C |
Fairchild Semiconductor |
MOSFET Complementary PowerTrench |
Data Sheet |
Negotiable |
|
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FDC6020C_F077 |
Fairchild Semiconductor |
MOSFET Complementary PwrTrh |
Data Sheet |
Negotiable |
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