Product Summary
The TISP83121DR-S is a dual-gate reverse-blocking unidirectional thyristor designed for the protection of dual-voltage ringing SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction. The TISP83121DR-S is a four-layer NPNP silicon thyristor structure which has an electrode connection to every layer. The TISP83121DR-S is a unidirectional protector and to prevent reverse bias, requires the use of a series diode between the protected line conductor and the protector.
Parametrics
TISP83121DR-S absolute maximum ratings: (1) Repetitive peak off-state voltage, 0 to 70°C, VDRM: 100V; (2) Non-repetitive peak on-state pulse current(see Notes 1 and 2) 10/1000μs s(GR-1089-CORE, open-circuit voltage wave shape 10/100μs) : 150A, 5/310μs s(CCITT K20/21, open-circuit voltage wave shape 7 kV10/70μs) : 150A, 8/20μs s(ANSI C62.41, open-circuit voltage wave shape 1.2/50μs) : 500A; (3) Non-repetitive peak on-state current, 50 Hz, halfwave rectified sinewave, (see Notes 1 and 2) ITSM: 22A (100ms) , 8A (1s) , 3A (900s) ; (4) Junction temperature Tj: -40 to +150°C; (5) Storage temperature range Tstg: -65 to 150°C.
Features
TISP83121DR-S features: (1) Programmable Protection Configurations up to ±100V; (2) Typically 5 Lines Protected by Two TISP83121D + Diode Steering Networks; (3) High Surge Current; (4) Pin compatible with the LCP3121; (5) Small Outline Surface Mount Package.
Diagrams
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TISP83121DR-S |
Bourns |
SCRs Dual Gate Unidirectional |
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