(China (Mainland))
Product Summary
The NAND08GW3B2CN6E is an NAND Flash 2112 byte/1056 word page family of non-volatile Flash memory. In the NAND08GW3B2CN6E devices, only one of the memory components can be enabled at a time, therefore, operations can only be performed on one of the memory components at any one time. The NAND08GW3B2CN6E operates from a 1.8V or 3V voltage supply.
Parametrics
NAND08GW3B2CN6E absolute maximum ratings: (1) (1)Temperature under bias TBIAS: -50 to 125°C; (2) Storage temperature TSTG: -65 to 150°C; (3) Input or output voltage VIO: -0.6 to 4.6V; (4) Supply voltage VDD: -0.6 to 4.6V.
Features
NAND08GW3B2CN6E features: (1) High density NAND Flash Memory; (2) NAND interface; (3) Supply voltage: 1.8V or 3.0V device; (4) Multiplane architecture; (5) Copy back program with automatic error detection code (EDC) ; (6) Cache read mode; (7) Fast block erase; (8) ECOPACK packages.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 NAND08GW3B2CN6E |
STMicroelectronics |
Flash NAND & S.MEDIA FLASH |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
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NAND R |
Other |
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Data Sheet |
Negotiable |
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NAND S |
Other |
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Data Sheet |
Negotiable |
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NAND01G-A |
Other |
|
Data Sheet |
Negotiable |
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NAND01G-AAZ3E |
Other |
|
Data Sheet |
Negotiable |
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NAND01G-B |
Other |
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Data Sheet |
Negotiable |
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NAND01G-B2B |
Other |
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Data Sheet |
Negotiable |
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