(China (Mainland))
Product Summary
The K6X1008C2D-TB55 is a 128Kx8 bit Low Power CMOS Static RAM fabricated by SAMSUNG’s advanced CMOS process technology. The device supports verious operating temperature ranges and have various package types for user flexibility of system design. The K6X1008C2D-TB55 also supports low data retention voltage for battery back-up operation with low data retention current.
Parametrics
K6X1008C2D-TB55 absolute maximum ratings: (1)Voltage on any pin relative to Vss, VIN,VOUT: -0.5 to VCC+0.5V(Max. 7.0V) V; (2)Voltage on Vcc supply relative to Vss, VCC: -0.3 to 7.0 V; (3)Power Dissipation, PD: 1.0 W; (4)Storage temperature, TSTG: -65 to 150℃; (5)Operating Temperature TA: 0 to 70℃.
Features
K6X1008C2D-TB55 features: (1)Process Technology: Full CMOS; (2)Organization: 128K x 8; (3)Power Supply Voltage: 4.5~5.5V; (4)Low Data Retention Voltage: 2V(Min); (5)Three state output and TTL Compatible; (6)Package Type: 32-DIP-600, 32-SOP-525, 32-SOP-525, 32-TSOP1-0820F.
Diagrams
