(China (Mainland))
Product Summary
The IR2106STR is a high voltage, high speed power MOSFET and IGBT driver with independent highand low side referenced output chan-nel. Proprietary HVIC and latchimmune CMOS technologies enableruggedized monolithic construction.The logic input is compatible withstandard CMOS or LSTTL output, down to 3.3V logic. The IR2106STR features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration whichoperates up to 600 volts.
Parametrics
IR2106STR absolute maximum ratings: (1)High side floating absolute voltage: 625V; (2)High side floating supply offset voltage: VB + 0.3V; (3)High side floating output voltage: VB + 0.3V; (4)Low side and logic fixed supply voltage: 25V; (5)Low side output voltage: VCC + 0.3V; (6)Logic input voltage: VCC + 0.3V; (7)Allowable offset supply voltage transient: 50V/ns; (8)Junction temperature: 150℃; (9)Storage temperature: 150℃; (10)Lead temperature (soldering, 10 seconds): 300℃.
Features
IR2106STR features: (1)Floating channel designed for bootstrap operation: Fully operational to +600V; Tolerant to negative transient voltagedV/dt immune; (2)Gate drive supply range from 10 to 20V (IR2106(4)); (3)Undervoltage lockout for both channels; (4)3.3V, 5V and 15V input logic compatible; (5)Matched propagation delay for both channels; (6)Logic and power ground +/- 5V offset; (7)Lower di/dt gate driver for better noise immunity; (8)Outputs in phase with inputs (IR2106).
Diagrams
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 IR2106STR |
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IC DRIVER HIGH/LOW 600V 8-SOIC |
Data Sheet |
Negotiable |
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IR2106STRPBF |
International Rectifier |
Power Driver ICs Hi&Lw Sd Drvr Soft Trn On Noninvert |
Data Sheet |
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