(China (Mainland))
Product Summary
The FQPF10N20 is an N-channel enhancement mode power field effect transistor produced using Fairchild’s proprietary, planar stripe, DMOS technology. The advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQPF10N20 is well suited for high effiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterrupted power supply, motor control.
Parametrics
FQPF10N20 absolute maximum ratings: (1)Drain-source voltage, VDSS: 200V; (2)Drain current, ID: 6.8A; (3)Drain current, pulsed, IDM: 27.2A; (4)Gate-source voltage, Vgss: ±30V; (5)Single pulsed avalanche energy, EAS: 180mJ; (6)Avalanche current, IAR: 6.8A; (7)Repetitive avalanche energy, EAR: 4.0mJ; (8)Ppeak diode recovery dv/dt, dv/dt: 5.5V/ns; (9)Power dissipation, PD: 40W; (10)Operating and storage temperature range, Tj, Tstg: -55 to +150℃.
Features
FQPF10N20 features: (1)6.8A, 200V, RDS(on) = 0.36Ω @ VGS =10V; (2)Low gate charge (typical 13.5nC); (3)Low crss (typical 13pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 FQPF10N20 |
Fairchild Semiconductor |
MOSFET 200V N-Ch MOSFET |
Data Sheet |
Negotiable |
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FQPF10N20C |
Fairchild Semiconductor |
MOSFET 200V N-Ch MOSFET |
Data Sheet |
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FQPF10N20T |
Fairchild Semiconductor |
MOSFET |
Data Sheet |
Negotiable |
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