(China (Mainland))
Product Summary
The FDS6680 is an N-Channel Logic Level MOSFET designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The FDS6680 features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Parametrics
FDS6680 absolute maximum ratings: (1)VDSS, Drain-Source Voltage: 30 V; (2)VGSS, Gate-Source Voltage: ±20 V; (3)ID, Drain Current, - Continuous (Note 1a): 11.5 A; - Pulsed: 50A; (4)PD, Power Dissipation for Single Operation (Note 1a): 2.5 W; (Note 1b): 1.2W; (Note 1c): 1W; (5)TJ,TSTG, Operating and Storage Temperature Range: -55 to 150℃.
Features
FDS6680 features: (1)11.5 A, 30 V. RDS(ON) = 0.010 W @ VGS = 10 V, RDS(ON) = 0.015 W @ VGS = 4.5 V; (2)Optimized for use in switching DC/DC converters with PWM controllers; (3)Very fast switching; (4)Low gate charge (typical Qg = 19 nC).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 FDS6680 |
Fairchild Semiconductor |
MOSFET SO-8 N-CH 30V |
Data Sheet |
Negotiable |
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FDS6680_L99Z |
Fairchild Semiconductor |
MOSFET N-Channel PWM Logic Level |
Data Sheet |
Negotiable |
|
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|
FDS6680AS |
Fairchild Semiconductor |
MOSFET 30V N-Channel PowerTrench SyncFET |
Data Sheet |
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FDS6680A |
Fairchild Semiconductor |
MOSFET SO-8 SGL N-CH 30V |
Data Sheet |
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FDS6680S |
Fairchild Semiconductor |
MOSFET SO-8 SGL N-CH 30V |
Data Sheet |
Negotiable |
|
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|
FDS6680A_Q |
Fairchild Semiconductor |
MOSFET SO-8 SGL N-CH 30V |
Data Sheet |
Negotiable |
|
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FDS6680S_D84Z |
Fairchild Semiconductor |
MOSFET 30V N-Ch PowerTrench |
Data Sheet |
Negotiable |
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