(China (Mainland))
Product Summary
The SI2309CDS-T1-E3 is a P-channel 60-V (D-S) MOSFET. The SI2309CDS-T1-E3 can be used in load switch.
Parametrics
SI2309CDS-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage: - 60V; (2)Gate-Source Voltage: ±20V; (3)Continuous Drain Current (TJ= 150 °C)a, b: - 1.6A; (4)Pulsed Drain Current (10 μs Pulse Width): -8A; (5)Maximum Power Dissipation: 1.7W; (6)Operating Junction and Storage Temperature Range: - 55 to 150°C; (7)Soldering Recommendations (Peak Temperature): 260°C.
Features
SI2309CDS-T1-E3 features: (1)halogen-free option available; (2)TrenchFET Power MOSFET.
Diagrams
| Image | Part No | Mfg | Description |  |
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 SI2309CDS-T1-E3 |
Vishay/Siliconix |
MOSFET 60V 1.6A 1.7W 345mohm @ 10V |
Data Sheet |
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Data Sheet |
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SI2301ADS-T1-E3 |
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MOSFET 20V 2.0A 0.9W |
Data Sheet |
Negotiable |
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