Product Summary
The FDS8812NZ is an N-Channel PowerTrench MOSFET. The FDS8812NZ is produced using Fairchild Semiconductor advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. The FDS8812NZ is well suited for Power Management and load switching applications common in notebook computers and portable battery pack.
Parametrics
FDS8812NZ absolute maximum ratings: (1)drain to source voltage: 30 V; (2)gate to source voltage: ±20 V; (3)drain current continuous: 20A; (4)single pulse avalanche energy: 661 mJ; (5)power dissipation: 2.5W; (6)operating and storage junction temperature range: -55 to +150°C.
Features
FDS8812NZ features: (1)Max rDS(on)= 4.0mΩ at VGS= 10V, ID = 20A; (2)Max rDS(on)= 4.9mΩ at VGS= 4.5V, ID =18A; (3)HBM ESD protection level of 6.4kV typical; (4)High performance trench technology for extremely low rDS; (5)High power and current handling capabilit; (6)RoHS compliant.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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FDS8812NZ |
Fairchild Semiconductor |
MOSFET 30V N-Ch PowerTrench MOSFET |
Data Sheet |
Negotiable |
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Image | Part No | Mfg | Description | Pricing (USD) |
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FDS8333C |
Fairchild Semiconductor |
MOSFET N & PCh PowerTrench 3V |
Data Sheet |
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FDS8333C_Q |
Fairchild Semiconductor |
MOSFET N & PCh PowerTrench 3V |
Data Sheet |
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FDS8433A |
Fairchild Semiconductor |
MOSFET SO-8 SGL P-CH -20V |
Data Sheet |
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FDS8447 |
Fairchild Semiconductor |
MOSFET 40V Single N-Channel PowerTrench MOSFET |
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FDS8449 |
Fairchild Semiconductor |
MOSFET 40V N-Ch UltraFET PowerTrench |
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FDS8449_F085 |
Fairchild Semiconductor |
MOSFET 40V N-Channel PowerTrench |
Data Sheet |
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