Product Summary

The US6M2TR is a 2.5V Drive Nch+Pch MOS FET. The application of the US6M2TR includes Switching.

Parametrics

US6M2TR absolute maximum ratings: (1)Drain-source voltage, VDSS: 30V; (2)Gate-source voltage, VGSS: 12V; (3)Drain current, continuous, ID: ±1.5A; IDP: ±6A; (4)Source current, IS: 0.6A; ISP: 6A; (5)Tatol power dissipation, PD: 1.0W; (6)Channel temperature, Tch: 150℃; (7)Storage temperature, Tstg: -55 to +150℃.

Features

US6M2TR features: (1)Nch MOS FET and PchMOS FET are put in TUMT6 package; (2)High-speed switching, lowOn-resistance; (3)Low voltage drive (2.5V drive); (4)Built-in G-S Protection Diode.

Diagrams

US6M2TR block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
US6M2TR
US6M2TR

ROHM Semiconductor

MOSFET N+P 20V 1.5A/1A

Data Sheet

0-1: $0.42
1-25: $0.34
25-100: $0.25
100-500: $0.16
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
US6M1
US6M1

Other


Data Sheet

Negotiable 
US6M11TR
US6M11TR


MOSFET N/P-CH 20V 1.5A TUMT6

Data Sheet

0-3000: $0.12
US6M1TR
US6M1TR

ROHM Semiconductor

MOSFET N+P 30 20V 1A

Data Sheet

0-3000: $0.13
3000-6000: $0.12
6000-12000: $0.11
US6M2TR
US6M2TR

ROHM Semiconductor

MOSFET N+P 20V 1.5A/1A

Data Sheet

0-1: $0.42
1-25: $0.34
25-100: $0.25
100-500: $0.16