(China (Mainland))
Product Summary
The SI4426DY-T1-E3 is an N-Channel 20V(D-S) MOSFET.
Parametrics
SI4426DY-T1-E3 absolute maximum ratings: (1)Source Voltage, VDS: 20V; (2)Gate-Source Voltage, VGS: ±12V; (3)Continuous Drain Current (TJ = 150℃), ID: ±8.5A; (4)Pulsed Drain Current (10 μs Pulse Width), IDM: ±40A; (5)Continuous Source Current (Diode Conduction), IS: 2.1A; (6)Maximum Power Dissipationa, PD: 2.5W; (7)Operating Junction and Storage Temperature Range, TJ, Tstg: -55 to 150℃.
Features
SI4426DY-T1-E3 features: (1)Maximum Junction-to-Ambienta, t ≤ 10 sec, RthJA: 50℃/W; Steady State: 70℃/W; (2)Maximum Junction-to-Foot (Drain) Steady State, RthJF: 20℃/W.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 SI4426DY-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 8.5A 2.5W |
Data Sheet |
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| Image | Part No | Mfg | Description | |
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Quantity | ||||||||||||
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Si4401BDY |
Other |
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Data Sheet |
Negotiable |
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SI4401BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 40V 10.5A 0.014Ohm |
Data Sheet |
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SI4401BDY-T1-GE3 |
Vishay/Siliconix |
MOSFET 40V 10.5A 2.9W 14mohm @ 10V |
Data Sheet |
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SI4401DDY-T1-GE3 |
Vishay/Siliconix |
MOSFET 40V 16.1A P-CH MOSFET |
Data Sheet |
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SI4401DY |
Vishay/Siliconix |
MOSFET 40V 10.5A 3W |
Data Sheet |
Negotiable |
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SI4401DY-E3 |
Vishay/Siliconix |
MOSFET 40V 10.5A 3W |
Data Sheet |
Negotiable |
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